Atomic layer deposition systems and methods including ...

Aug 26, 2008· Atomic layer deposition systems and methods including metal betadiketiminate compounds

Patent US Systems and methods for forming ...

... a zirconium and/or hafniumcontaining layer on a ... a substrate in a vapor deposition process. The zirconium, hafnium, ... "Atomic layer deposition" ...

Deposition methods for forming silicon oxide layers ...

Jan 27, 2009· Deposition methods for forming silicon oxide layers ... "Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis ... An insulating layer 16, ...

Patent US Atomic layer deposited nanolaminates .

A dielectric film containing HfO 2 /ZrO 2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent ...

Patent US Mixed alkoxy precursors and .

A method employing rapid vapor deposition ... exposing a substrate surface to a metalcontaining precursor gas to form a substantially saturated layer of metal ...

Atomic layer deposited lanthanum hafnium oxide .

... layers provide an insulating layer in a variety of ... Atomic layer deposition of zirconiumdoped ... Atomic layer deposition of hafnium lanthanum ...

Patent US Pretreatment processes within .

For example, the dielectric material may contain hafnium oxide, zirconium ... Method for forming gate insulating layer having ... Atomic layer deposition of hafnium ...

Patent US Atomic layer deposited zirconium ...

An embodiment for a method for forming an oxide film containing titanium and zirconium by atomic layer deposition ... Genus, Inc: Radical ... gate insulating layer ...

Patent US Atomic layer deposition of Dy .

Forming the dielectric structure includes depositing hafnium oxide using atomic layer deposition ... a insulating layer ... Atomic layer deposition of zirconium ...

ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS .

The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one ta. .

Patent US Atomic layer deposition of .

Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium ...

Patent US Electronic device having a hafnium ...

The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination ...

Patent US Atomic layer deposition of .

The metal oxynitride layer may comprise a zirconium oxynitride layer, a hafnium ... insulating film using atomic layer deposition: ... Atomic layer deposition of ...

SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM ...

Dec 24, 2008· SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM ... is an atomic layer deposition ... deposition process. The zirconium, hafnium.

Patent US ALD metal oxide deposition process ...

ALD metal oxide deposition process using direct oxidation: ... ALD metal oxide deposition process using direct ... Methods for atomic layer deposition of hafnium ...

Patent US Atomic layer deposition of .

A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve ... An insulating layer ... Atomic layer deposited zirconium ...

Patent US ATOMIC LAYER DEPOSITED ...

A dielectric film containing a nanolaminate with a hafnium oxide layer and a zirconium oxide ... layer of hafnium oxide by atomic layer deposition. ... Genus, Inc ...

Patent US Atomic layer deposition of .

Genus, Inc. Radicalassisted ... Apparatuses and methods for atomic layer deposition of hafniumcontaining highk ... Insulating film formation method which exhibits ...

PlasmaAssisted Atomic Layer Deposition of Conductive ...

PlasmaAssisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis ... Genus Inc. website, ... zirconium oxide, ...

Method for forming Lshaped spacers with precise width ...

Dec 16, 2003· Method for forming Lshaped spacers with precise width control ... are formed by atomic layer deposition ... hafnium oxide, and zirconium ...

Patent US Atomic layer deposited ...

... includes forming a layer of zirconium oxide by atomic layer deposition. ... for atomic layer deposition of hafniumcontaining high ... an insulating metal oxide ...

Patent US Stabilization of highk .

In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate ...

Brevetto US Atomic layer deposition of .

A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve ... An insulating layer ... Atomic layer deposited zirconium ...

An Overview of Atomic Layer Deposition and its role ... insulating materials like SiO2 cannot ... semiconductor oxide devices are zirconium, hafnium, ...